FJT 1159 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

FJT 1159: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.275 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.105 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-362-1741, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

FJT 1159

NSN: 5961-01-362-1741
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 07263 — FAIRCHILD SEMICONDUCTOR CORP (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.275 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.105 INCHES MAXIMUM IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
capacitance_rating_in_picofarads	1.8 MAXIMUM
voltage_rating_in_volts_per_characteristic	20.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
NSN	5961-01-362-1741

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.105 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CAPACITANCE RATING IN PICOFARADS: 1.8 MAXIMUM

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.105 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.275 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN
CAPACITANCE RATING IN PICOFARADS	1.8 MAXIMUM
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is FJT 1159?

FJT 1159 is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for FJT 1159?

FJT 1159 is cataloged in the U.S. Government catalog under NSN 5961-01-362-1741. This indicates validated use in U.S. government and defense supply chains.

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FJT 1159 — SEMICONDUCTOR DEVICE,DIODE

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