FF200-OUY-024B: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.650 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.240 INCHES NOMINAL IN, special_features: CENTER CONTACT POLARITY.BIPOLAR AC/DC, semiconductor_material: GALLIUM INDIUM ARSENIC PHOSPHIDE. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-500-9639, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.650 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| overall_diameter | 0.240 INCHES NOMINAL IN |
| special_features | CENTER CONTACT POLARITY.BIPOLAR AC/DC |
| semiconductor_material | GALLIUM INDIUM ARSENIC PHOSPHIDE |
| end_item_identification | MEP-810A,B A |
| terminal_type_and_quantity | 2 PIN |
| color_tone_produced_per_source | YELLOW SEMICONDUCTOR |
| voltage_rating_in_volts_per_characteristic | 24.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| NSN | 5980-01-500-9639 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 24.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| OVERALL DIAMETER | 0.240 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | GALLIUM INDIUM ARSENIC PHOSPHIDE |
| OVERALL LENGTH | 0.650 INCHES MAXIMUM IN |
| SPECIAL FEATURES | CENTER CONTACT POLARITY.BIPOLAR AC/DC |
| END ITEM IDENTIFICATION | MEP-810A,B A |
| MATERIAL | PLASTIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| COLOR TONE PRODUCED PER SOURCE | YELLOW SEMICONDUCTOR |
No substitute or cross-reference records for this part.