FF200-OUY-006B: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.650 INCHES NOMINAL IN, mounting_method: TERMINAL, overall_diameter: 0.240 INCHES NOMINAL IN, special_features: CENTER CONTACT POLARITY.BIPOLAR AC/DC, luminous_intensity: 75.0 MICROCANDELA MINIMUM. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-523-3288, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.650 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| overall_diameter | 0.240 INCHES NOMINAL IN |
| special_features | CENTER CONTACT POLARITY.BIPOLAR AC/DC |
| luminous_intensity | 75.0 MICROCANDELA MINIMUM |
| semiconductor_material | GALLIUM INDIUM ARSENIC PHOSPHIDE |
| end_item_identification | VARIABLE BALLAST CONTROL PANEL |
| terminal_type_and_quantity | 2 PIN |
| color_tone_produced_per_source | YELLOW SEMICONDUCTOR |
| voltage_rating_in_volts_per_characteristic | 6.0 NOMINAL BASE SUPPLY VOLTAGE |
| NSN | 5980-01-523-3288 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 NOMINAL BASE SUPPLY VOLTAGE |
| OVERALL DIAMETER | 0.240 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | GALLIUM INDIUM ARSENIC PHOSPHIDE |
| LUMINOUS INTENSITY | 75.0 MICROCANDELA MINIMUM |
| OVERALL LENGTH | 0.650 INCHES NOMINAL IN |
| SPECIAL FEATURES | CENTER CONTACT POLARITY.BIPOLAR AC/DC |
| END ITEM IDENTIFICATION | VARIABLE BALLAST CONTROL PANEL |
| MATERIAL | PLASTIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 2 PIN |