FF200-0UY-028B — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

FF200-0UY-028B: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.650 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.240 INCHES NOMINAL IN, special_features: CENTER CONTACT POLARITY: BIPOLAR, luminous_intensity: 75.0 MILLICANDELA NOMINAL. This part is cataloged in the U.S.

Government catalog under NSN 5980-01-590-9230, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

FF200-0UY-028B

NSN: 5980-01-590-9230
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 8Z410 — LEDTRONICS, INC. DBA LEDTRONICS INC (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.650 INCHES MAXIMUM IN
mounting_method	PRESS FIT
overall_diameter	0.240 INCHES NOMINAL IN
special_features	CENTER CONTACT POLARITY: BIPOLAR
luminous_intensity	75.0 MILLICANDELA NOMINAL
semiconductor_material	GALLIUM INDIUM ARSENIC PHOSPHIDE
terminal_type_and_quantity	1 TURRET
color_tone_produced_per_source	YELLOW SEMICONDUCTOR
current_rating_per_characteristic	15.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	28.0 NOMINAL FORWARD VOLTAGE, DC
NSN	5980-01-590-9230

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL FORWARD VOLTAGE, DC

•

OVERALL DIAMETER: 0.240 INCHES NOMINAL IN

•

MOUNTING METHOD: PRESS FIT

•

SEMICONDUCTOR MATERIAL: GALLIUM INDIUM ARSENIC PHOSPHIDE

•

LUMINOUS INTENSITY: 75.0 MILLICANDELA NOMINAL

•

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	28.0 NOMINAL FORWARD VOLTAGE, DC
OVERALL DIAMETER	0.240 INCHES NOMINAL IN
MOUNTING METHOD	PRESS FIT
SEMICONDUCTOR MATERIAL	GALLIUM INDIUM ARSENIC PHOSPHIDE
LUMINOUS INTENSITY	75.0 MILLICANDELA NOMINAL
OVERALL LENGTH	0.650 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	15.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE
SPECIAL FEATURES	CENTER CONTACT POLARITY: BIPOLAR
MATERIAL	PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	1 TURRET

OTHER ITEMS IN FSC 5980 — Optoelectronic Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5980-00-005-9850 5980-00-007-7654 5980-00-008-5173 5980-00-009-3039 5980-00-010-1721 5980-00-019-1445 5980-00-027-8087 5980-00-028-3463

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is FF200-0UY-028B?

FF200-0UY-028B is a LIGHT EMITTING DIODE.

What is the NSN for FF200-0UY-028B?

FF200-0UY-028B is cataloged in the U.S. Government catalog under NSN 5980-01-590-9230. This indicates validated use in U.S. government and defense supply chains.

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