FDV302P — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

FDV302P: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include mounting_method: TERMINAL, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON, power_rating_per_characteristic: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION, current_rating_per_characteristic: -0.12 AMPERES NOMINAL DRAIN CURRENT, voltage_rating_in_volts_per_characteristic: -25.0 NOMINAL DRAIN TO SOURCE VOLTAGE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-487-4973, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

FDV302P

NSN: 5961-01-487-4973
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 07263 — FAIRCHILD SEMICONDUCTOR CORP (USA)

SPECIFICATIONS

mounting_method	TERMINAL
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
power_rating_per_characteristic	0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	-0.12 AMPERES NOMINAL DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	-25.0 NOMINAL DRAIN TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-487-4973

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 NOMINAL DRAIN TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

•

CURRENT RATING PER CHARACTERISTIC: -0.12 AMPERES NOMINAL DRAIN CURRENT

•

POWER RATING PER CHARACTERISTIC: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-25.0 NOMINAL DRAIN TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
INTERNAL CONFIGURATION	FIELD EFFECT
CURRENT RATING PER CHARACTERISTIC	-0.12 AMPERES NOMINAL DRAIN CURRENT
POWER RATING PER CHARACTERISTIC	0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

A1Z1029034Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is FDV302P?

FDV302P is a TRANSISTOR.

What parts can replace FDV302P?

There is 1 known substitute for FDV302P: A1Z1029034. Substitute compatibility should be verified for your specific system.

What is the NSN for FDV302P?

FDV302P is cataloged in the U.S. Government catalog under NSN 5961-01-487-4973. This indicates validated use in U.S. government and defense supply chains.

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