FD1107 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

FD1107: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-401-6418, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

FD1107

NSN: 5961-00-401-6418
NIINs: 004016418, 015547167
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 21845 — SOLITRON DEVICES, INC. (USA)

SPECIFICATIONS

overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.230 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
semiconductor_material	SILICON ALL TRANSISTOR
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	6 UNINSULATED WIRE LEAD
component_name_and_quantity	2 TRANSISTOR
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
voltage_rating_in_volts_per_characteristic	50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
NSN	5961-00-401-6418

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.210 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR

SUBSTITUTES & CROSS-REFERENCES 1

932034-1Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is FD1107?

FD1107 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace FD1107?

There is 1 known substitute for FD1107: 932034-1. Substitute compatibility should be verified for your specific system.

What is the NSN for FD1107?

FD1107 is cataloged in the U.S. Government catalog under NSN 5961-00-401-6418. This indicates validated use in U.S. government and defense supply chains.

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FD1107 — SEMICONDUCTOR DEVICES,UNITIZED

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