FA1L3Z — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

FA1L3Z: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 2.8 MILLIMETERS NOMINAL MM, overall_height: 1.1 MILLIMETERS NOMINAL MM, overall_length: 2.9 MILLIMETERS NOMINAL MM, mounting_method: TERMINAL, special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-463-0640, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

FA1L3Z

NSN: 5961-01-463-0640
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 0T1F7 — ANRITSU COMPANY (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	2.8 MILLIMETERS NOMINAL MM
overall_height	1.1 MILLIMETERS NOMINAL MM
overall_length	2.9 MILLIMETERS NOMINAL MM
mounting_method	TERMINAL
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
end_item_identification	6625014252551E/IFSCM33297
power_rating_per_characteristic	200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
voltage_rating_in_volts_per_characteristic	60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
NSN	5961-01-463-0640

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	1.1 MILLIMETERS NOMINAL MM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	2.9 MILLIMETERS NOMINAL MM
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	2.8 MILLIMETERS NOMINAL MM
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
SPECIAL FEATURES	JUNCTION PATTERN ARRANGEMENT: NPN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is FA1L3Z?

FA1L3Z is a TRANSISTOR.

What is the NSN for FA1L3Z?

FA1L3Z is cataloged in the U.S. Government catalog under NSN 5961-01-463-0640. This indicates validated use in U.S. government and defense supply chains.

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FA1L3Z — TRANSISTOR

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