F200TG4-5V/20-P: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 15.9 MILLIMETERS NOMINAL MM, mounting_method: PRESS FIT, overall_diameter: 5.9 MILLIMETERS NOMINAL MM, features_provided: HERMETICALLY SEALED CASE, lens_transparency: TRANSLUCENT. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-332-5728, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 15.9 MILLIMETERS NOMINAL MM |
| mounting_method | PRESS FIT |
| overall_diameter | 5.9 MILLIMETERS NOMINAL MM |
| features_provided | HERMETICALLY SEALED CASE |
| lens_transparency | TRANSLUCENT |
| luminous_intensity | 900.0 MILLICANDELA NOMINAL |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| function_for_which_designed | VISIBLE LIGHT EMITTING |
| color_tone_produced_per_source | GREEN LENS |
| NSN | 5980-01-332-5728 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM FORWARD VOLTAGE, DC |
| OVERALL DIAMETER | 5.9 MILLIMETERS NOMINAL MM |
| MOUNTING METHOD | PRESS FIT |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 900.0 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 15.9 MILLIMETERS NOMINAL MM |
| INTERNAL CONFIGURATION | POINT CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
No substitute or cross-reference records for this part.