F10-07: FERRULE,ELECTRICAL CONDUCTOR.
The FERRULE,ELECTRICAL CONDUCTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.670 INCHES NOMINAL IN, overall_height: 0.200 INCHES MAXIMUM IN, overall_length: 0.975 INCHES NOMINAL IN, mounting_method: SLOT, features_provided: LOW NOISE, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-514-2180, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.670 INCHES NOMINAL IN |
| overall_height | 0.200 INCHES MAXIMUM IN |
| overall_length | 0.975 INCHES NOMINAL IN |
| mounting_method | SLOT |
| features_provided | LOW NOISE |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 TAB, SOLDER LUG |
| power_rating_per_characteristic | 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 4.00 AMPERES MAXIMUM DRAIN CURRENT |
| part_name_assigned_by_controlling_agency | SILICON RF POWER, VDMOS TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 70.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| NSN | 5961-01-514-2180 |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 70.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | SLOT |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.975 INCHES NOMINAL IN |
| OVERALL WIDTH | 0.670 INCHES NOMINAL IN |
| FEATURES PROVIDED | LOW NOISE |
| CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM DRAIN CURRENT |
| SPECIAL FEATURES | GOLD METALIZED; PACKAGE STYLE - AK; HIGH EFFICIENCY; LINEAR; HIGH GAIN; MAXIMUM JUNCTION TEMPERATURE PLUS 200.0 DEGREES C; STORAGE TEMPERATURE MINUS 65.0 TO PLUS 150.0 DEGREES C; DESIGNED SPECIFICALLY FOR BROADBAND RADIO FREQUENCY (RF) APPLICATIONS |
No substitute or cross-reference records for this part.