EH100 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

EH100: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, current_type: AC, overall_depth: 25.000 INCHES NOMINAL IN, overall_width: 27.000 INCHES NOMINAL IN, overall_length: 0.320 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN, mounting_method: TERMINAL. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-136-9587, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

EH100

NSN: 5961-01-136-9587
NIINs: 011369587, 013208935
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 83701 — ELECTRONIC DEVICES INC DBA E D I (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
current_type	AC
overall_depth	25.000 INCHES NOMINAL IN
overall_width	27.000 INCHES NOMINAL IN
overall_length	0.320 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM AND 1.200 INCHES MAXIMUM IN
overall_diameter	0.147 INCHES MINIMUM AND 0.153 INCHES MAXIMUM IN
feed_chute/hopper	INCLUDED
end_item_identification	TACTICS TRNR 26512
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
current_rating_per_characteristic	15.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
NSN	5961-01-136-9587

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.147 INCHES MINIMUM AND 0.153 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.200 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.147 INCHES MINIMUM AND 0.153 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM AND 1.200 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.320 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	15.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
END ITEM IDENTIFICATION	TACTICS TRNR 26512
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	PLASTIC ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

MR250-1Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is EH100?

EH100 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace EH100?

There is 1 known substitute for EH100: MR250-1. Substitute compatibility should be verified for your specific system.

What is the NSN for EH100?

EH100 is cataloged in the U.S. Government catalog under NSN 5961-01-136-9587. This indicates validated use in U.S. government and defense supply chains.

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EH100 — SEMICONDUCTOR DEVICE,DIODE

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