DV2860T: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.810 INCHES MINIMUM IN, overall_height: 0.310 INCHES MAXIMUM IN, overall_length: 0.970 INCHES MINIMUM AND 0.990 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-333-7713, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.810 INCHES MINIMUM IN |
| overall_height | 0.310 INCHES MAXIMUM IN |
| overall_length | 0.970 INCHES MINIMUM AND 0.990 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| end_item_identification | 5865-01-219-2097 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 3 RIBBON |
| power_rating_per_characteristic | 120.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 6.00 AMPERES MAXIMUM DRAIN CURRENT |
| NSN | 5961-01-333-7713 |
| OVERALL HEIGHT | 0.310 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 80.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 80.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.970 INCHES MINIMUM AND 0.990 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 0.810 INCHES MINIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 6.00 AMPERES MAXIMUM DRAIN CURRENT |
No substitute or cross-reference records for this part.