DV2820W: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include internal_configuration: FIELD EFFECT, semiconductor_material: SILICON, function_for_which_designed: AMPLIFIER, power_rating_per_characteristic: 40.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION, current_rating_per_characteristic: 2.00 AMPERES NOMINAL DRAIN CURRENT AND 1.80 AMPERES NOMINAL ON-STATE DRAIN CURRENT, maximum_operating_temp_per_measurement_point: 200.0 CELSIUS JUNCTION DEGC. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-310-9404, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| function_for_which_designed | AMPLIFIER |
| power_rating_per_characteristic | 40.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 2.00 AMPERES NOMINAL DRAIN CURRENT AND 1.80 AMPERES NOMINAL ON-STATE DRAIN CURRENT |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-310-9404 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO GATE VOLTAGE AND 80.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES NOMINAL DRAIN CURRENT AND 1.80 AMPERES NOMINAL ON-STATE DRAIN CURRENT |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| POWER RATING PER CHARACTERISTIC | 40.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION |