DV2805W — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

DV2805W: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON, power_rating_per_characteristic: 10.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION, current_rating_per_characteristic: 0.50 AMPERES NOMINAL DRAIN CURRENT, voltage_rating_in_volts_per_characteristic: 20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO GATE VOLTAGE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-310-9403, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

DV2805W

NSN: 5961-01-310-9403
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50998 — M/A-COM TECHNOLOGY SOLUTIONS INC. (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
power_rating_per_characteristic	10.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	0.50 AMPERES NOMINAL DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO GATE VOLTAGE
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-01-310-9403

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO GATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

•

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES NOMINAL DRAIN CURRENT

•

MATERIAL: CERAMIC ENCLOSURE

•

POWER RATING PER CHARACTERISTIC: 10.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 80.0 NOMINAL DRAIN TO GATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
SEMICONDUCTOR MATERIAL	SILICON
INTERNAL CONFIGURATION	FIELD EFFECT
CURRENT RATING PER CHARACTERISTIC	0.50 AMPERES NOMINAL DRAIN CURRENT
MATERIAL	CERAMIC ENCLOSURE
POWER RATING PER CHARACTERISTIC	10.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

91549933Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Demilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is DV2805W?

DV2805W is a TRANSISTOR.

What parts can replace DV2805W?

There is 1 known substitute for DV2805W: 91549933. Substitute compatibility should be verified for your specific system.

What is the NSN for DV2805W?

DV2805W is cataloged in the U.S. Government catalog under NSN 5961-01-310-9403. This indicates validated use in U.S. government and defense supply chains.

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DV2805W — TRANSISTOR

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