DQT03E102 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

DQT03E102: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.300 INCHES MAXIMUM IN, overall_length: 1.550 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: NPN, SILICON, HIGH-POWER FOR SONAR SOUNDING SET, AN/BQN-17, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-440-7478, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

DQT03E102

NSN: 5961-01-440-7478
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 33178 — MICROSEMI PPC INC (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.300 INCHES MAXIMUM IN
overall_length	1.550 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
special_features	NPN, SILICON, HIGH-POWER FOR SONAR SOUNDING SET, AN/BQN-17
semiconductor_material	SILICON
end_item_identification	AN/BQN-17 EC- E/I FSCM 53711
mounting_facility_quantity	1
terminal_type_and_quantity	1 CASE AND 2 PIN
power_rating_per_characteristic	250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	15.00 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
voltage_rating_in_volts_per_characteristic	400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
NSN	5961-01-440-7478

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.300 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.550 INCHES MAXIMUM IN
OVERALL WIDTH	1.050 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	15.00 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
SPECIAL FEATURES	NPN, SILICON, HIGH-POWER FOR SONAR SOUNDING SET, AN/BQN-17

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

6871268-2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

PP8961Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is DQT03E102?

DQT03E102 is a TRANSISTOR.

What parts can replace DQT03E102?

There are 2 known substitutes for DQT03E102: 6871268-2, PP8961. Substitute compatibility should be verified for your specific system.

What is the NSN for DQT03E102?

DQT03E102 is cataloged in the U.S. Government catalog under NSN 5961-01-440-7478. This indicates validated use in U.S. government and defense supply chains.

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