DN1139 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

DN1139: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL SEMICONDUCTOR. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-144-2480, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

DN1139

NSN: 5961-00-144-2480
NIINs: 001442480, 004022014
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)

SPECIFICATIONS

overall_length	0.210 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.230 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
semiconductor_material	SILICON ALL SEMICONDUCTOR
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	7 UNINSULATED WIRE LEAD
component_name_and_quantity	2 TRANSISTOR
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR
current_rating_per_characteristic	5.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
voltage_rating_in_volts_per_characteristic	-40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
NSN	5961-00-144-2480

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	5.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY	6 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 2

292490Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

29240Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is DN1139?

DN1139 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace DN1139?

There are 2 known substitutes for DN1139: 292490, 29240. Substitute compatibility should be verified for your specific system.

What is the NSN for DN1139?

DN1139 is cataloged in the U.S. Government catalog under NSN 5961-00-144-2480. This indicates validated use in U.S. government and defense supply chains.

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DN1139 — SEMICONDUCTOR DEVICES,UNITIZED

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