DMS 85099B — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

DMS 85099B: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.700 INCHES NOMINAL IN, overall_height: 0.700 INCHES NOMINAL IN, overall_length: 1.219 INCHES MAXIMUM IN, transfer_ratio: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER, mounting_method: THREADED STUD(S). This part is cataloged in the U.S.

Government catalog under NSN 5961-00-006-1517, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

DMS 85099B

NSN: 5961-00-006-1517
NIINs: 000061517, 001041172, 001374382, 001700155, 001892940, 003258829, 004017735, 004186544, 006156093, 007025487, 007026542, 007221377, 008949157, 009336323, 010449038, 011345245, 011964892, 012196554
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 16236 — DLA LAND AND MARITIME DBA ENGINEERING AND TECHNICAL SUPPORT DIV DOCUMENT STANDARDIZATION DIVISION (VENDOR ITEM DRAWINGS) (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.700 INCHES NOMINAL IN
overall_height	0.700 INCHES NOMINAL IN
overall_length	1.219 INCHES MAXIMUM IN
transfer_ratio	150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
mounting_method	THREADED STUD(S)
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.335 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
precious_material	GOLD AND SILVER
nominal_thread_size	0.190 INCHES IN
NSN	5961-00-006-1517

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 0.687 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	0.687 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.335 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
NOMINAL THREAD SIZE	0.250 INCHES IN

SUBSTITUTES & CROSS-REFERENCES 1

SP5773-1Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is DMS 85099B?

DMS 85099B is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace DMS 85099B?

There is 1 known substitute for DMS 85099B: SP5773-1. Substitute compatibility should be verified for your specific system.

What is the NSN for DMS 85099B?

DMS 85099B is cataloged in the U.S. Government catalog under NSN 5961-00-006-1517. This indicates validated use in U.S. government and defense supply chains.

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