DMJ2778-99: SEMICONDUCTOR DEVICE SET.
The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 0.002 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM, overall_height: 0.010 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM, overall_length: 0.036 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM, mounting_method: PRESS FIT LOCATION NOT OTHERWISE SPECIFIED, terminal_length: 0.013 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-478-7616, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_width | 0.002 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
| overall_height | 0.010 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
| overall_length | 0.036 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
| mounting_method | PRESS FIT LOCATION NOT OTHERWISE SPECIFIED |
| terminal_length | 0.013 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
| semiconductor_material | SILICON LOCATION NOT OTHERWISE SPECIFIED |
| mounting_facility_quantity | 1 LOCATION NOT OTHERWISE SPECIFIED |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| power_rating_per_characteristic | 300.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE LOCATION NOT OTHERWISE SPECIFIED |
| capacitance_rating_in_picofarads | 0.05 MINIMUM AND 0.06 MAXIMUM LOCATION NOT OTHERWISE SPECIFIED |
| current_rating_per_characteristic | 550.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC LOCATION NOT OTHERWISE SPECIFIED |
| NSN | 5961-01-478-7616 |
| OVERALL HEIGHT | 0.010 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.0 MINIMUM BREAKDOWN VOLTAGE, DC LOCATION NOT OTHERWISE SPECIFIED |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION LOCATION NOT OTHERWISE SPECIFIED DEGC |
| MOUNTING FACILITY QUANTITY | 1 LOCATION NOT OTHERWISE SPECIFIED |
| TERMINAL LENGTH | 0.013 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
| MOUNTING METHOD | PRESS FIT LOCATION NOT OTHERWISE SPECIFIED |
| SEMICONDUCTOR MATERIAL | SILICON LOCATION NOT OTHERWISE SPECIFIED |
| OVERALL LENGTH | 0.036 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 0.002 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED MM |
No substitute or cross-reference records for this part.