DF60AA160: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include special_features: ISOLATED MOUNTING BASE, HIGH RELIABILITY BY UNIQUE GLASS PASSIVATION,, current_rating_per_characteristic: 12.0 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT, part_name_assigned_by_controlling_agency: DIODE (THREE PHASES BRIDGE TYPE), voltage_rating_in_volts_per_characteristic: 16.00 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-653-8372, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | ISOLATED MOUNTING BASE, HIGH RELIABILITY BY UNIQUE GLASS PASSIVATION, |
| current_rating_per_characteristic | 12.0 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT |
| part_name_assigned_by_controlling_agency | DIODE (THREE PHASES BRIDGE TYPE) |
| voltage_rating_in_volts_per_characteristic | 16.00 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE |
| NSN | 5961-01-653-8372 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 16.00 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 12.0 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT |
| SPECIAL FEATURES | ISOLATED MOUNTING BASE, HIGH RELIABILITY BY UNIQUE GLASS PASSIVATION, |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | DIODE (THREE PHASES BRIDGE TYPE) |
No substitute or cross-reference records for this part.