DE5516AH-250: MICROCIRCUIT,MEMORY.
The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM IN, body_height: 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN, body_length: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM IN, features_provided: W/ENABLE AND BIDIRECTIONAL AND W/BUFFERED OUTPUT AND HIGH IMPEDANCE AND HERMETICALLY SEALED, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-372-5026, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM IN |
| body_height | 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN |
| body_length | 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM IN |
| features_provided | W/ENABLE AND BIDIRECTIONAL AND W/BUFFERED OUTPUT AND HIGH IMPEDANCE AND HERMETICALLY SEALED |
| output_logic_form | TRANSISTOR-TRANSISTOR LOGIC |
| inclosure_material | CERAMIC |
| memory_device_type | EEPROM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| operating_temp_range | -40.0 TO 85.0 CELSIUS DEGC |
| input_circuit_pattern | 22 INPUT |
| inclosure_configuration | DUAL-IN-LINE |
| terminal_surface_treatment | SOLDER |
| NSN | 5962-01-372-5026 |
| INPUT CIRCUIT PATTERN | 22 INPUT |
| INCLOSURE MATERIAL | CERAMIC |
| TERMINAL SURFACE TREATMENT | SOLDER |
| BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM IN |
| BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM IN |
| CAPITANCE RATING PER CHARACTERISTIC | 6.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM |
| FEATURES PROVIDED | W/ENABLE AND BIDIRECTIONAL AND W/BUFFERED OUTPUT AND HIGH IMPEDANCE AND HERMETICALLY SEALED |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CURRENT RATING PER CHARACTERISTIC | 110.00 MILLIAMPERES MAXIMUM SUPPLY |
| MEMORY DEVICE TYPE | EEPROM |