The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 1.500 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE, nominal_thread_size: 0.375 INCHES IN, thread_series_designator: UNF. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-312-3973, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 1.500 INCHES NOMINAL IN |
| mounting_method | THREADED STUD(S) |
| features_provided | HERMETICALLY SEALED CASE AND MOUNTING HARDWARE |
| nominal_thread_size | 0.375 INCHES IN |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 1.062 INCHES NOMINAL IN |
| terminal_type_and_quantity | 1 THREADED STUD AND 1 INSULATED WIRE LEAD W/TERMINAL LUG |
| current_rating_per_characteristic | 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK |
| voltage_rating_in_volts_per_characteristic | 1.3 MAXIMUM FORWARD VOLTAGE, PEAK |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-312-3973 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION DEGC |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.3 MAXIMUM FORWARD VOLTAGE, PEAK |
| NOMINAL THREAD SIZE | 0.375 INCHES IN |
| MOUNTING FACILITY QUANTITY | 1 |
| OVERALL LENGTH | 1.500 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND MOUNTING HARDWARE |
| OVERALL WIDTH ACROSS FLATS | 1.062 INCHES NOMINAL IN |
| MOUNTING METHOD | THREADED STUD(S) |
| MATERIAL | SILICON SEMICONDUCTOR |