D20-28B: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.300 INCHES MAXIMUM IN, overall_length: 0.280 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN, nominal_thread_size: 0.164 INCHES IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-033-2330, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.300 INCHES MAXIMUM IN |
| overall_length | 0.280 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| nominal_thread_size | 0.164 INCHES IN |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| thread_series_designator | UNIFIED NATIONAL COARSE (UNC) |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 4 FERRULE |
| power_rating_per_characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| NSN | 5961-01-033-2330 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.280 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH | 0.300 INCHES MAXIMUM IN |
| NOMINAL THREAD SIZE | 0.164 INCHES IN |
| CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |