D12-0012-001 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

D12-0012-001: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.250 INCHES MAXIMUM IN, overall_diameter: 0.050 INCHES MINIMUM AND 0.070 INCHES MAXIMUM IN, terminal_circle_diameter: 0.017 INCHES MINIMUM AND 0.023 INCHES MAXIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-184-2829, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

D12-0012-001

NSN: 5961-01-184-2829
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 14304 — L3HARRIS TECHNOLOGIES, INC. DBA HARRIS CORP DIV HARRIS DEFENSE COMMUNICATIONS (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.250 INCHES MAXIMUM IN
overall_diameter	0.050 INCHES MINIMUM AND 0.070 INCHES MAXIMUM IN
terminal_circle_diameter	0.017 INCHES MINIMUM AND 0.023 INCHES MAXIMUM IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	400.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
capacitance_rating_in_picofarads	0.5 MAXIMUM
voltage_rating_in_volts_per_characteristic	200.0 MINIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-184-2829

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.050 INCHES MINIMUM AND 0.070 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.250 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CAPACITANCE RATING IN PICOFARADS: 0.5 MAXIMUM

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MINIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.050 INCHES MINIMUM AND 0.070 INCHES MAXIMUM IN
TERMINAL LENGTH	1.250 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
CAPACITANCE RATING IN PICOFARADS	0.5 MAXIMUM
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 2

MA-47123Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

2710024Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is D12-0012-001?

D12-0012-001 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace D12-0012-001?

There are 2 known substitutes for D12-0012-001: MA-47123, 2710024. Substitute compatibility should be verified for your specific system.

What is the NSN for D12-0012-001?

D12-0012-001 is cataloged in the U.S. Government catalog under NSN 5961-01-184-2829. This indicates validated use in U.S. government and defense supply chains.

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D12-0012-001 — SEMICONDUCTOR DEVICE,DIODE

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