CXT3019: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM IN, overall_height: 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM IN, overall_length: 0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN, semiconductor_material: SILICON, function_for_which_designed: AMPLIFIER, power_rating_per_characteristic: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-535-1428, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM IN |
| overall_height | 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM IN |
| overall_length | 0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| special_features | SOT-89 CASE; MANUFACTURED BY THE EPITAXIAL PLANAR PROCESS, EPOXY MOLDED; DESIGNED FOR HIGH CURRENT GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| semiconductor_material | SILICON |
| function_for_which_designed | AMPLIFIER |
| power_rating_per_characteristic | 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| part_name_assigned_by_controlling_agency | SURFACE MOUNT NPN SILICON TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-535-1428 |
| OVERALL HEIGHT | 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| OVERALL WIDTH | 0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| SPECIAL FEATURES | SOT-89 CASE; MANUFACTURED BY THE EPITAXIAL PLANAR PROCESS, EPOXY MOLDED; DESIGNED FOR HIGH CURRENT GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SURFACE MOUNT NPN SILICON TRANSISTOR |
No substitute or cross-reference records for this part.