CMDSH-3 LEAD FREE: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_width: 2.50 MILLIMETERS NOMINAL MM, overall_height: 0.90 MILLIMETERS NOMINAL MM, overall_length: 1.25 MILLIMETERS NOMINAL MM, special_features: OPERATING TEMPERATURE: -65.00 DEG. C TO 150.00 DEG.
C.; MOUNTING TYPE: SURFACE MOUNT;, end_item_identification: V-22 OSPREY AIRCRAFT. This part is cataloged in the U.S. Government catalog under NSN 5961-01-650-5331, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_width | 2.50 MILLIMETERS NOMINAL MM |
| overall_height | 0.90 MILLIMETERS NOMINAL MM |
| overall_length | 1.25 MILLIMETERS NOMINAL MM |
| special_features | OPERATING TEMPERATURE: -65.00 DEG. C TO 150.00 DEG. C.; MOUNTING TYPE: SURFACE MOUNT; |
| end_item_identification | V-22 OSPREY AIRCRAFT |
| power_rating_per_characteristic | 250.00 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 100.00 MILLIAMPERES NOMINAL SOURCE CURRENT |
| part_name_assigned_by_controlling_agency | FAST SWITCHING SCHOTTKY DIODE |
| voltage_rating_in_volts_per_characteristic | 30.00 NOMINAL SOURCE SUPPLY VOLTAGE |
| NSN | 5961-01-650-5331 |
| OVERALL HEIGHT | 0.90 MILLIMETERS NOMINAL MM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.00 NOMINAL SOURCE SUPPLY VOLTAGE |
| OVERALL LENGTH | 1.25 MILLIMETERS NOMINAL MM |
| OVERALL WIDTH | 2.50 MILLIMETERS NOMINAL MM |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL SOURCE CURRENT |
| SPECIAL FEATURES | OPERATING TEMPERATURE: -65.00 DEG. C TO 150.00 DEG. C.; MOUNTING TYPE: SURFACE MOUNT; |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | FAST SWITCHING SCHOTTKY DIODE |
| END ITEM IDENTIFICATION | V-22 OSPREY AIRCRAFT |
| MATERIAL | SILICON SEMICONDUCTOR |
| POWER RATING PER CHARACTERISTIC | 250.00 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
No substitute or cross-reference records for this part.