CD2315: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.500 INCHES NOMINAL IN, overall_length: 0.160 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON, terminal_type_and_quantity: 4 TAB, SOLDER LUG. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-080-8162, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.500 INCHES NOMINAL IN |
| overall_length | 0.160 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 4 TAB, SOLDER LUG |
| power_rating_per_characteristic | 140.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-080-8162 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.160 INCHES NOMINAL IN |
| OVERALL WIDTH | 0.500 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| MATERIAL | CERAMIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 4 TAB, SOLDER LUG |