CB1139 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

CB1139: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.200 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-241-3591, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

CB1139

NSN: 5961-00-241-3591
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)

SPECIFICATIONS

overall_length	0.200 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
function_for_which_designed	SWITCHING
current_rating_per_characteristic	30.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 25.00 MILLIAMPERES NOMINAL GATE CURRENT, AVERAGE
NSN	5961-00-241-3591

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND 500.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 150.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	6.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND 500.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.200 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	30.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 25.00 MILLIAMPERES NOMINAL GATE CURRENT, AVERAGE

SUBSTITUTES & CROSS-REFERENCES 1

AA101Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)Demilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is CB1139?

CB1139 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace CB1139?

There is 1 known substitute for CB1139: AA101. Substitute compatibility should be verified for your specific system.

What is the NSN for CB1139?

CB1139 is cataloged in the U.S. Government catalog under NSN 5961-00-241-3591. This indicates validated use in U.S. government and defense supply chains.

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CB1139 — SEMICONDUCTOR DEVICE,THYRISTOR

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