CA3096AE: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.300 INCHES NOMINAL IN, overall_height: 0.280 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN, overall_length: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.145 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-006-0985, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.300 INCHES NOMINAL IN |
| overall_height | 0.280 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN |
| overall_length | 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| transfer_ratio | 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
| mounting_method | TERMINAL |
| terminal_length | 0.145 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 14 RIBBON |
| component_name_and_quantity | 5 TRANSISTOR |
| power_rating_per_characteristic | 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| NSN | 5961-01-006-0985 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN FIFTH TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN FOURTH TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN FIRST TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN SECOND TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN THIRD TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| COMPONENT NAME AND QUANTITY | 5 TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | -10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC FIFTH TRANSISTOR |