C62FX535 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

C62FX535: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.875 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 6.0 MILLIMETERS MM, semiconductor_material: SILICON, thread_series_designator: ISO M. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-028-9805, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

C62FX535

NSN: 5961-01-028-9805
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 03508 — GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT (USA)

SPECIFICATIONS

overall_length	0.875 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	6.0 MILLIMETERS MM
semiconductor_material	SILICON
thread_series_designator	ISO M
mounting_facility_quantity	1
overall_width_across_flats	1.057 INCHES NOMINAL IN
terminal_type_and_quantity	1 THREADED STUD AND 2 TAB, SOLDER LUG
power_rating_per_characteristic	5.0 WATTS MAXIMUM PEAK GATE POWER-FORWARD
current_rating_per_characteristic	70.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
voltage_rating_in_volts_per_characteristic	75.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
NSN	5961-01-028-9805

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 1.057 INCHES NOMINAL IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	75.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.875 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	1.057 INCHES NOMINAL IN
NOMINAL THREAD SIZE	6.0 MILLIMETERS MM
CURRENT RATING PER CHARACTERISTIC	70.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

C 62FReference document

Same NSN cross-reference

Reference document — Secondary reference

338378Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Semi-active item — no replacement plannedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is C62FX535?

C62FX535 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace C62FX535?

There are 2 known substitutes for C62FX535: C 62F, 338378. Substitute compatibility should be verified for your specific system.

What is the NSN for C62FX535?

C62FX535 is cataloged in the U.S. Government catalog under NSN 5961-01-028-9805. This indicates validated use in U.S. government and defense supply chains.

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