C52G — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

C52G: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 2.637 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: MOUNTING HARDWARE, nominal_thread_size: 0.469 INCHES IN, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-169-4086, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

C52G

NSN: 5961-01-169-4086
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 01002 — GENERAL ELECTRIC CO CAPACITORS DIV (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	2.637 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	MOUNTING HARDWARE
nominal_thread_size	0.469 INCHES IN
semiconductor_material	SILICON
thread_series_designator	UNIFIED NATIONAL COARSE (UNC)
mounting_facility_quantity	1
overall_width_across_flats	1.050 INCHES MAXIMUM IN
terminal_type_and_quantity	1 THREADED STUD AND 1 UNTHREADED HOLE AND 1 TAB, SOLDER LUG
current_rating_per_characteristic	110.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 75.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, INSTANTANEOUS
voltage_rating_in_volts_per_characteristic	150.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
NSN	5961-01-169-4086

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: MOUNTING HARDWARE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	150.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-83
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	2.637 INCHES MAXIMUM IN
FEATURES PROVIDED	MOUNTING HARDWARE
OVERALL WIDTH ACROSS FLATS	1.050 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.469 INCHES IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is C52G?

C52G is a SEMICONDUCTOR DEVICE,THYRISTOR.

What is the NSN for C52G?

C52G is cataloged in the U.S. Government catalog under NSN 5961-01-169-4086. This indicates validated use in U.S. government and defense supply chains.

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C52G — SEMICONDUCTOR DEVICE,THYRISTOR

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