C3D10060A: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON CARBIDE SEMICONDUCTOR, overall_width: 0.381 INCHES NOMINAL IN, overall_height: 1.105 INCHES NOMINAL IN, overall_length: 1.105 INCHES NOMINAL IN, mounting_method: PRESS FIT, terminal_length: 0.50 INCHES NOMINAL IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-690-4783, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON CARBIDE SEMICONDUCTOR |
| overall_width | 0.381 INCHES NOMINAL IN |
| overall_height | 1.105 INCHES NOMINAL IN |
| overall_length | 1.105 INCHES NOMINAL IN |
| mounting_method | PRESS FIT |
| terminal_length | 0.50 INCHES NOMINAL IN |
| terminal_type_and_quantity | 2 PIN |
| power_rating_per_characteristic | 136.5 WATTS NOMINAL TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 46.0 AMPERES NOMINAL REPETITIVE PEAK FORWARD CURRENT |
| part_name_assigned_by_controlling_agency | DIODE |
| voltage_rating_in_volts_per_characteristic | 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-690-4783 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 NOMINAL REVERSE VOLTAGE, PEAK |
| MOUNTING METHOD | PRESS FIT |
| OVERALL LENGTH | 1.105 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 10.0 AMPERES NOMINAL FORWARD CURRENT, AVERAGE |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SEMICONDUCTOR DEVICE,DIODE |
| MATERIAL | SILICON CARBIDE SEMICONDUCTOR |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
No substitute or cross-reference records for this part.