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C38E — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

C38E: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.330 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-246-8945, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
C38E
NSN: 5961-00-246-8945
NIINs: 002468945, 011028559
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: KD4N7 — MINISTRY OF DEFENCE, DE&S AIR DEFENCE ELECTRONIC WARFARE SYSTEMS (ADEWS DT) (GBR)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.330 INCHES MAXIMUM IN
mounting_methodTHREADED STUD(S)
special_featuresJUNCTION PATTERN ARRANGEMENT: PNPN
features_providedHERMETICALLY SEALED CASE
nominal_thread_size0.250 INCHES IN
internal_configurationJUNCTION CONTACT
semiconductor_materialSILICON
thread_series_designatorUNF
mounting_facility_quantity1
overall_width_across_flats0.844 INCHES MAXIMUM IN
terminal_type_and_quantity2 TAB, SOLDER LUG
NSN5961-00-246-8945
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN C38E MFR OEM SEMICONDUCTOR DEVICE,THYRISTOR
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKOVER VOLTAGE, DC
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS CASE DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
MOUNTING METHOD: THREADED STUD(S)
•
SEMICONDUCTOR MATERIAL: SILICON
•
INTERNAL CONFIGURATION: JUNCTION CONTACT
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC500.0 MAXIMUM BREAKOVER VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY1
MOUNTING METHODTHREADED STUD(S)
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM IN
INTERNAL CONFIGURATIONJUNCTION CONTACT
FEATURES PROVIDEDHERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM IN
NOMINAL THREAD SIZE0.250 INCHES IN
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is C38E?
C38E is a SEMICONDUCTOR DEVICE,THYRISTOR.
What is the NSN for C38E?
C38E is cataloged in the U.S. Government catalog under NSN 5961-00-246-8945. This indicates validated use in U.S. government and defense supply chains.
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