C365M: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 12.45 MILLIMETERS MINIMUM AND 15.24 MILLIMETERS MAXIMUM MM, mounting_method: COMPRESSION, overall_diameter: 36.07 MILLIMETERS MINIMUM AND 43.18 MILLIMETERS MAXIMUM MM, semiconductor_material: SILICON, terminal_type_and_quantity: 2 CASE AND 1 QUICK DISCONNECT, MALE AND 1 SOLDER STUD. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-167-0060, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_length | 12.45 MILLIMETERS MINIMUM AND 15.24 MILLIMETERS MAXIMUM MM |
| mounting_method | COMPRESSION |
| overall_diameter | 36.07 MILLIMETERS MINIMUM AND 43.18 MILLIMETERS MAXIMUM MM |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 2 CASE AND 1 QUICK DISCONNECT, MALE AND 1 SOLDER STUD |
| current_rating_per_characteristic | 260.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 17.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT |
| voltage_rating_in_volts_per_characteristic | 600.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS JUNCTION DEGC |
| joint_electronic_device_engineering_council/jedec/case_outline_designation | TO-200AB |
| NSN | 5961-01-167-0060 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION DEGC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-200AB |
| OVERALL DIAMETER | 36.07 MILLIMETERS MINIMUM AND 43.18 MILLIMETERS MAXIMUM MM |
| MOUNTING METHOD | COMPRESSION |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 12.45 MILLIMETERS MINIMUM AND 15.24 MILLIMETERS MAXIMUM MM |
| CURRENT RATING PER CHARACTERISTIC | 260.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 17.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT |
| MATERIAL | CERAMIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 2 CASE AND 1 QUICK DISCONNECT, MALE AND 1 SOLDER STUD |