C157M — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

C157M: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, nominal_thread_size: 0.500 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-065-8080, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

C157M

NSN: 5961-01-065-8080
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 66844 — POWEREX, INC. (USA)

SPECIFICATIONS

overall_length	0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
nominal_thread_size	0.500 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
power_rating_per_characteristic	2.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
current_rating_per_characteristic	110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
NSN	5961-01-065-8080

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
NOMINAL THREAD SIZE	0.500 INCHES IN
CURRENT RATING PER CHARACTERISTIC	110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL

SUBSTITUTES & CROSS-REFERENCES 4

T507-09-70-6-4AAReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

S18CGF6B2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

610-00069Reference document

Same NSN cross-reference

Reference document — Secondary reference

SKT70F06DTReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is C157M?

C157M is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace C157M?

There are 4 known substitutes for C157M: T507-09-70-6-4AA, S18CGF6B2, 610-00069 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for C157M?

C157M is cataloged in the U.S. Government catalog under NSN 5961-01-065-8080. This indicates validated use in U.S. government and defense supply chains.

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