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C155B — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

C155B: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: COPPER ALLOY, overall_length: 1.030 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.500 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-498-8429, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
C155B
NSN: 5961-00-498-8429
NIINs: 004988429, 011903569, 014571403
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 03508 — GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT (USA)
SPECIFICATIONS
materialCOPPER ALLOY
overall_length1.030 INCHES NOMINAL IN
mounting_methodTHREADED STUD(S)
special_featuresJUNCTION PATTERN ARRANGEMENT: PNPN
features_providedHERMETICALLY SEALED CASE
nominal_thread_size0.500 INCHES IN
internal_configurationJUNCTION CONTACT
semiconductor_materialSILICON
thread_series_designatorUNF
mounting_facility_quantity1
overall_width_across_flats1.062 INCHES NOMINAL IN
terminal_type_and_quantity1 THREADED STUD AND 2 TAB, SOLDER LUG
NSN5961-00-498-8429
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN C155B MFR OEM SEMICONDUCTOR DEVICE,THYRISTOR
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM BREAKOVER VOLTAGE, DC
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
MOUNTING METHOD: THREADED STUD(S)
•
SEMICONDUCTOR MATERIAL: SILICON
•
INTERNAL CONFIGURATION: JUNCTION CONTACT
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC240.0 MAXIMUM BREAKOVER VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY1
MOUNTING METHODTHREADED STUD(S)
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH1.030 INCHES NOMINAL IN
INTERNAL CONFIGURATIONJUNCTION CONTACT
FEATURES PROVIDEDHERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS1.062 INCHES NOMINAL IN
NOMINAL THREAD SIZE0.500 INCHES IN
SUBSTITUTES & CROSS-REFERENCES 1
C55BReference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is C155B?
C155B is a SEMICONDUCTOR DEVICE,THYRISTOR.
What parts can replace C155B?
There is 1 known substitute for C155B: C55B. Substitute compatibility should be verified for your specific system.
What is the NSN for C155B?
C155B is cataloged in the U.S. Government catalog under NSN 5961-00-498-8429. This indicates validated use in U.S. government and defense supply chains.
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