C152E — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

C152E: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.030 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.500 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-488-9972, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

C152E

NSN: 5961-00-488-9972
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 09214 — GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN (USA)

SPECIFICATIONS

overall_length	1.030 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.500 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	1.060 INCHES NOMINAL IN
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
power_rating_per_characteristic	10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
NSN	5961-00-488-9972

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKOVER VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	500.0 MAXIMUM BREAKOVER VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.030 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	1.060 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.500 INCHES IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

NLC152ESame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

3880031Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is C152E?

C152E is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace C152E?

There are 2 known substitutes for C152E: NLC152E, 3880031. Substitute compatibility should be verified for your specific system.

What is the NSN for C152E?

C152E is cataloged in the U.S. Government catalog under NSN 5961-00-488-9972. This indicates validated use in U.S. government and defense supply chains.

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C152E — SEMICONDUCTOR DEVICE,THYRISTOR

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