C106B32 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

C106B32: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.400 INCHES NOMINAL IN, overall_length: 0.835 INCHES NOMINAL IN, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD, power_rating_per_characteristic: 0.5 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-034-6543, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

C106B32

NSN: 5961-01-034-6543
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 09214 — GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN (USA)

SPECIFICATIONS

overall_width	0.400 INCHES NOMINAL IN
overall_length	0.835 INCHES NOMINAL IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	0.5 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	15.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
NSN	5961-01-034-6543

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT

•

TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

•

POWER RATING PER CHARACTERISTIC: 0.5 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.835 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.400 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	15.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	0.5 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

2540Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is C106B32?

C106B32 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace C106B32?

There is 1 known substitute for C106B32: 2540. Substitute compatibility should be verified for your specific system.

What is the NSN for C106B32?

C106B32 is cataloged in the U.S. Government catalog under NSN 5961-01-034-6543. This indicates validated use in U.S. government and defense supply chains.

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C106B32 — SEMICONDUCTOR DEVICE,THYRISTOR

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