The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.320 INCHES MAXIMUM IN, overall_height: 0.185 INCHES MAXIMUM IN, overall_length: 0.405 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM IN. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-050-1495, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.320 INCHES MAXIMUM IN |
| overall_height | 0.185 INCHES MAXIMUM IN |
| overall_length | 0.405 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNPN |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| current_rating_per_characteristic | 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| NSN | 5961-00-050-1495 |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| OVERALL HEIGHT | 0.185 INCHES MAXIMUM IN |
| OVERALL LENGTH | 0.405 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM IN |