BZX55C3V0 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

BZX55C3V0: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 3.9 MILLIMETERS NOMINAL MM, mounting_method: TERMINAL, terminal_length: 26.0 MILLIMETERS NOMINAL MM, overall_diameter: 1.9 MILLIMETERS NOMINAL MM, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-221-2247, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

BZX55C3V0

NSN: 5961-01-221-2247
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 24972 — AEG CORP (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	3.9 MILLIMETERS NOMINAL MM
mounting_method	TERMINAL
terminal_length	26.0 MILLIMETERS NOMINAL MM
overall_diameter	1.9 MILLIMETERS NOMINAL MM
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
voltage_rating_in_volts_per_characteristic	1.0 MAXIMUM FORWARD VOLTAGE, DC
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
electrode_internally-electrically_connected_to_case	COLLECTOR
NSN	5961-01-221-2247

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35

•

OVERALL DIAMETER: 1.9 MILLIMETERS NOMINAL MM

•

TERMINAL LENGTH: 26.0 MILLIMETERS NOMINAL MM

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1.0 MAXIMUM FORWARD VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	DO-35
OVERALL DIAMETER	1.9 MILLIMETERS NOMINAL MM
TERMINAL LENGTH	26.0 MILLIMETERS NOMINAL MM
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	3.9 MILLIMETERS NOMINAL MM
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is BZX55C3V0?

BZX55C3V0 is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for BZX55C3V0?

BZX55C3V0 is cataloged in the U.S. Government catalog under NSN 5961-01-221-2247. This indicates validated use in U.S. government and defense supply chains.

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BZX55C3V0 — SEMICONDUCTOR DEVICE,DIODE

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