BYV27-200-TR — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

BYV27-200-TR: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 3.6 MILLIMETERS NOMINAL MM, overall_height: 3.6 MILLIMETERS NOMINAL MM, overall_length: 4.2 MILLIMETERS NOMINAL MM, mounting_method: UNTHREADED HOLE(S), terminal_length: 1.024 INCHES MINIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-668-4873, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

BYV27-200-TR

NSN: 5961-01-668-4873
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 56DR0 — VISHAY AMERICAS (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_width	3.6 MILLIMETERS NOMINAL MM
overall_height	3.6 MILLIMETERS NOMINAL MM
overall_length	4.2 MILLIMETERS NOMINAL MM
mounting_method	UNTHREADED HOLE(S)
terminal_length	1.024 INCHES MINIMUM IN
features_provided	ROHS DIRECTIVE COMPLIANCE AND ELECTROSTATIC SENSITIVE
end_item_identification	4940016580431
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
function_for_which_designed	AVALANCHE DIODE
current_rating_per_characteristic	50.0 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
NSN	5961-01-668-4873

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

•

MOUNTING FACILITY QUANTITY: 2

•

TERMINAL LENGTH: 1.024 INCHES MINIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

FEATURES PROVIDED: ROHS DIRECTIVE COMPLIANCE AND ELECTROSTATIC SENSITIVE

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	3.6 MILLIMETERS NOMINAL MM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	220.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
MOUNTING FACILITY QUANTITY	2
TERMINAL LENGTH	1.024 INCHES MINIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
OVERALL LENGTH	4.2 MILLIMETERS NOMINAL MM
OVERALL WIDTH	3.6 MILLIMETERS NOMINAL MM
FEATURES PROVIDED	ROHS DIRECTIVE COMPLIANCE AND ELECTROSTATIC SENSITIVE
CURRENT RATING PER CHARACTERISTIC	50.0 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FUNCTION FOR WHICH DESIGNED	AVALANCHE DIODE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is BYV27-200-TR?

BYV27-200-TR is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for BYV27-200-TR?

BYV27-200-TR is cataloged in the U.S. Government catalog under NSN 5961-01-668-4873. This indicates validated use in U.S. government and defense supply chains.

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BYV27-200-TR — SEMICONDUCTOR DEVICE,DIODE

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