BYV26C — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

BYV26C: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.180 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.102 INCHES MINIMUM IN, overall_diameter: 0.150 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-255-8975, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

BYV26C

NSN: 5961-01-255-8975
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 25403 — PHILIPS CIRCUIT ASSEMBLIES (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.180 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.102 INCHES MINIMUM IN
overall_diameter	0.150 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
current_rating_per_characteristic	20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
voltage_rating_in_volts_per_characteristic	600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
NSN	5961-01-255-8975

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.150 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.102 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.3 MAXIMUM FORWARD VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.150 INCHES MAXIMUM IN
TERMINAL LENGTH	1.102 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.180 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 4

3370010PReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

FBL00-223Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

90001A1946Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

1N6622Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is BYV26C?

BYV26C is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace BYV26C?

There are 4 known substitutes for BYV26C: 3370010P, FBL00-223, 90001A1946 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for BYV26C?

BYV26C is cataloged in the U.S. Government catalog under NSN 5961-01-255-8975. This indicates validated use in U.S. government and defense supply chains.

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BYV26C — SEMICONDUCTOR DEVICE,DIODE

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