BSV81: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 5.3 MILLIMETERS MAXIMUM MM, mounting_method: TERMINAL, terminal_length: 12.7 MILLIMETERS MINIMUM MM, overall_diameter: 4.8 MILLIMETERS MAXIMUM MM, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-301-4750, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 5.3 MILLIMETERS MAXIMUM MM |
| mounting_method | TERMINAL |
| terminal_length | 12.7 MILLIMETERS MINIMUM MM |
| overall_diameter | 4.8 MILLIMETERS MAXIMUM MM |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 4 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 25.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM SOURCE CURRENT |
| voltage_rating_in_volts_per_characteristic | 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 10.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS JUNCTION DEGC |
| joint_electronic_device_engineering_council/jedec/case_outline_designation | TO-72 |
| NSN | 5961-01-301-4750 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 10.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION DEGC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| OVERALL DIAMETER | 4.8 MILLIMETERS MAXIMUM MM |
| TERMINAL LENGTH | 12.7 MILLIMETERS MINIMUM MM |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 5.3 MILLIMETERS MAXIMUM MM |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| CURRENT RATING PER CHARACTERISTIC | 25.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM SOURCE CURRENT |
No substitute or cross-reference records for this part.