BFR96T: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, mounting_method: TERMINAL, semiconductor_material: SILICON, terminal_type_and_quantity: 3 PIN, function_for_which_designed: AMPLIFIER, power_rating_per_characteristic: 700.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-564-9794, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| mounting_method | TERMINAL |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 PIN |
| function_for_which_designed | AMPLIFIER |
| power_rating_per_characteristic | 700.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 100.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN |
| part_name_assigned_by_controlling_agency | NPN PLANAR RF TRANSISTOR |
| NSN | 5961-01-564-9794 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 2.5 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | NPN PLANAR RF TRANSISTOR |
| MATERIAL | PLASTIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| POWER RATING PER CHARACTERISTIC | 700.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
No substitute or cross-reference records for this part.