BAS21LT1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

BAS21LT1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 2.500 MILLIMETERS MAXIMUM MM, overall_height: 1.110 MILLIMETERS MAXIMUM MM, overall_length: 3.040 MILLIMETERS MAXIMUM MM, mounting_method: COMPRESSION, terminal_length: 2.040 MILLIMETERS MAXIMUM MM. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-480-5683, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

BAS21LT1

NSN: 5961-01-480-5683
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	2.500 MILLIMETERS MAXIMUM MM
overall_height	1.110 MILLIMETERS MAXIMUM MM
overall_length	3.040 MILLIMETERS MAXIMUM MM
mounting_method	COMPRESSION
terminal_length	2.040 MILLIMETERS MAXIMUM MM
mounting_facility_quantity	3
terminal_type_and_quantity	3 TAB, SOLDER LUG
power_rating_per_characteristic	225.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
capacitance_rating_in_picofarads	5.0 MAXIMUM
current_rating_per_characteristic	200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 625.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, OVERLOAD
voltage_rating_in_volts_per_characteristic	250.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
NSN	5961-01-480-5683

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION AND -55.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 3

•

TERMINAL LENGTH: 2.040 MILLIMETERS MAXIMUM MM

•

MOUNTING METHOD: COMPRESSION

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	1.110 MILLIMETERS MAXIMUM MM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	250.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION AND -55.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	3
TERMINAL LENGTH	2.040 MILLIMETERS MAXIMUM MM
MOUNTING METHOD	COMPRESSION
OVERALL LENGTH	3.040 MILLIMETERS MAXIMUM MM
OVERALL WIDTH	2.500 MILLIMETERS MAXIMUM MM
CAPACITANCE RATING IN PICOFARADS	5.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC	200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 625.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, OVERLOAD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is BAS21LT1?

BAS21LT1 is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for BAS21LT1?

BAS21LT1 is cataloged in the U.S. Government catalog under NSN 5961-01-480-5683. This indicates validated use in U.S. government and defense supply chains.

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BAS21LT1 — SEMICONDUCTOR DEVICE,DIODE

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