B6NAMM20002QSW — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

B6NAMM20002QSW: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.600 INCHES MAXIMUM IN, body_height: 0.225 INCHES MAXIMUM IN, body_length: 1.450 INCHES NOMINAL IN, features_provided: ELECTROSTATIC SENSITIVE, inclosure_material: CERAMIC, memory_device_type: EPROM. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-498-3460, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

B6NAMM20002QSW

NSN: 5962-01-498-3460
FSC: 5962 — Microcircuits, Electronic
CAGE: 21066 — WAYNE KERR ELECTRONICS INC (USA)

SPECIFICATIONS

body_width	0.600 INCHES MAXIMUM IN
body_height	0.225 INCHES MAXIMUM IN
body_length	1.450 INCHES NOMINAL IN
features_provided	ELECTROSTATIC SENSITIVE
inclosure_material	CERAMIC
memory_device_type	EPROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	+0.0 TO 70.0 CELSIUS DEGC
end_item_identification	ELECT TEST EQUIP - GPETE/6625-01-458-5920
inclosure_configuration	DUAL-IN-LINE
time_rating_per_chacteristic	150.00 NANOSECONDS NOMINAL ACCESS NS
part_name_assigned_by_controlling_agency	262,144-BIT (32K X 8) HIGH PERFORMANCE CMOS EPROM
NSN	5962-01-498-3460

COMPONENT DIAGRAM

KEY FEATURES

•

INCLOSURE MATERIAL: CERAMIC

•

BODY WIDTH: 0.600 INCHES MAXIMUM IN

•

BODY HEIGHT: 0.225 INCHES MAXIMUM IN

•

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: EPROM

•

BODY LENGTH: 1.450 INCHES NOMINAL IN

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INCLOSURE MATERIAL	CERAMIC
BODY WIDTH	0.600 INCHES MAXIMUM IN
BODY HEIGHT	0.225 INCHES MAXIMUM IN
FEATURES PROVIDED	ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	EPROM
BODY LENGTH	1.450 INCHES NOMINAL IN
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	-0.6 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
OPERATING TEMP RANGE	+0.0 TO 70.0 CELSIUS DEGC

OTHER ITEMS IN FSC 5962 — Microcircuits, Electronic

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5962-00-001-1861 5962-00-001-1901 5962-00-001-1902 5962-00-001-1905 5962-00-001-1906 5962-00-001-1907 5962-00-001-1908 5962-00-001-1909

SUBSTITUTES & CROSS-REFERENCES 2

M27C256B-15F1Reference document

Same NSN cross-reference

Reference document — Secondary reference

NM27C256Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is B6NAMM20002QSW?

B6NAMM20002QSW is a MICROCIRCUIT,MEMORY.

What parts can replace B6NAMM20002QSW?

There are 2 known substitutes for B6NAMM20002QSW: M27C256B-15F1, NM27C256. Substitute compatibility should be verified for your specific system.

What is the NSN for B6NAMM20002QSW?

B6NAMM20002QSW is cataloged in the U.S. Government catalog under NSN 5962-01-498-3460. This indicates validated use in U.S. government and defense supply chains.

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