B3206CWG6-15V/40P: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 1.190 INCHES NOMINAL IN, mounting_method: PRESS FIT, overall_diameter: 0.400 INCHES NOMINAL IN, luminous_intensity: 45.0 MILLICANDELA NOMINAL, internal_configuration: POINT CONTACT. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-327-1107, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_length | 1.190 INCHES NOMINAL IN |
| mounting_method | PRESS FIT |
| overall_diameter | 0.400 INCHES NOMINAL IN |
| luminous_intensity | 45.0 MILLICANDELA NOMINAL |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM PHOSPHIDE |
| terminal_type_and_quantity | 1 CASE AND 1 FERRULE |
| function_for_which_designed | VISIBLE LIGHT EMITTING |
| color_tone_produced_per_source | RED SEMICONDUCTOR |
| internal_junction_configuration | PN |
| current_rating_per_characteristic | 40.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| NSN | 5980-01-327-1107 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 NOMINAL FORWARD VOLTAGE, DC |
| OVERALL DIAMETER | 0.400 INCHES NOMINAL IN |
| MOUNTING METHOD | PRESS FIT |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM PHOSPHIDE |
| LUMINOUS INTENSITY | 45.0 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 1.190 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | POINT CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| FUNCTION FOR WHICH DESIGNED | VISIBLE LIGHT EMITTING |
No substitute or cross-reference records for this part.