A3110676-001 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

A3110676-001: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.175 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.075 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD, power_rating_per_characteristic: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-394-3364, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

A3110676-001

NSN: 5961-01-394-3364
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50101 — MICROSEMI CORP - MASSACHUSETTS DIV MICROSEMI - LOWELL (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.175 INCHES MAXIMUM IN
mounting_method	TERMINAL
overall_diameter	0.075 INCHES MAXIMUM IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
voltage_rating_in_volts_per_characteristic	20.0 MINIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-01-394-3364

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.075 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

TEST DATA DOCUMENT: 80063-A3110676 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MINIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.075 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.175 INCHES MAXIMUM IN
TEST DATA DOCUMENT	80063-A3110676 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is A3110676-001?

A3110676-001 is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for A3110676-001?

A3110676-001 is cataloged in the U.S. Government catalog under NSN 5961-01-394-3364. This indicates validated use in U.S. government and defense supply chains.

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A3110676-001 — SEMICONDUCTOR DEVICE,DIODE

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