A3110506-002: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.705 INCHES MAXIMUM IN, overall_height: 0.520 INCHES NOMINAL IN, overall_length: 1.120 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), terminal_length: 0.500 INCHES MINIMUM IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-394-2115, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.705 INCHES MAXIMUM IN |
| overall_height | 0.520 INCHES NOMINAL IN |
| overall_length | 1.120 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| terminal_length | 0.500 INCHES MINIMUM IN |
| special_features | CASE CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| NSN | 5961-01-394-2115 |
| OVERALL HEIGHT | 0.520 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 16.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 1.120 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 0.705 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 13.00 AMPERES MAXIMUM DRAIN CURRENT |
No substitute or cross-reference records for this part.