A2N20445467 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

A2N20445467: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include special_features: ACCESS SPEED 120.0 NANOSECONDS NS, features_provided: BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: EEPROM, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-450-5689, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

A2N20445467

NSN: 5962-01-450-5689
FSC: 5962 — Microcircuits, Electronic
CAGE: U2982 — BAE SYSTEMS (DEFENCE SYSTEMS) LTD (GBR)

SPECIFICATIONS

special_features	ACCESS SPEED 120.0 NANOSECONDS NS
features_provided	BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT
output_logic_form	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	EEPROM
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
inclosure_configuration	DUAL-IN-LINE
terminal_type_and_quantity	32 PIN
voltage_rating_and_type_per_characteristic	5.0 VOLTS NOMINAL POWER SOURCE
NSN	5962-01-450-5689

COMPONENT DIAGRAM

KEY FEATURES

•

INCLOSURE MATERIAL: CERAMIC

•

FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: EEPROM

•

OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

•

VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE

•

OPERATING TEMP RANGE: -55.0 TO 125.0 CELSIUS DEGC

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INCLOSURE MATERIAL	CERAMIC
FEATURES PROVIDED	BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	EEPROM
OUTPUT LOGIC FORM	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES	ACCESS SPEED 120.0 NANOSECONDS NS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.0 VOLTS NOMINAL POWER SOURCE
OPERATING TEMP RANGE	-55.0 TO 125.0 CELSIUS DEGC
TERMINAL TYPE AND QUANTITY	32 PIN

OTHER ITEMS IN FSC 5962 — Microcircuits, Electronic

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5962-00-001-1861 5962-00-001-1901 5962-00-001-1902 5962-00-001-1905 5962-00-001-1906 5962-00-001-1907 5962-00-001-1908 5962-00-001-1909

SUBSTITUTES & CROSS-REFERENCES 2

446/4/80213/003Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

X28C512DMB-12Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Demilitarization required — mutilation + specific procedure

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FREQUENTLY ASKED QUESTIONS

What is A2N20445467?

A2N20445467 is a MICROCIRCUIT,MEMORY.

What parts can replace A2N20445467?

There are 2 known substitutes for A2N20445467: 446/4/80213/003, X28C512DMB-12. Substitute compatibility should be verified for your specific system.

What is the NSN for A2N20445467?

A2N20445467 is cataloged in the U.S. Government catalog under NSN 5962-01-450-5689. This indicates validated use in U.S. government and defense supply chains.

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A2N20445467 — MICROCIRCUIT,MEMORY

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