94-7297: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN, overall_height: 0.350 INCHES MAXIMUM IN, overall_length: 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM IN, mounting_method: TERMINAL, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-245-0815, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| overall_height | 0.350 INCHES MAXIMUM IN |
| overall_length | 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| semiconductor_material | SILICON ALL TRANSISTOR |
| component_name_and_quantity | 4 TRANSISTOR |
| specification/standard_data | 81349-MIL-S-19500/597 GOVERNMENT SPECIFICATION |
| power_rating_per_characteristic | 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 1.00 AMPERES MAXIMUM DRAIN CURRENT AND 4.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-245-0815 |
| OVERALL HEIGHT | 0.350 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| OVERALL WIDTH | 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM DRAIN CURRENT AND 4.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK ALL TRANSISTOR |
| SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/597 GOVERNMENT SPECIFICATION |