The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.170 INCHES NOMINAL IN, mounting_method: TERMINAL, overall_diameter: 0.350 INCHES NOMINAL IN, internal_configuration: FIELD EFFECT OR UNIJUNCTION, semiconductor_material: SILICON, terminal_type_and_quantity: 3 SOLDER STUD. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-351-6074, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.170 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| overall_diameter | 0.350 INCHES NOMINAL IN |
| internal_configuration | FIELD EFFECT OR UNIJUNCTION |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 SOLDER STUD |
| power_rating_per_characteristic | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| voltage_rating_in_volts_per_characteristic | 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 2.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE |
| NSN | 5961-01-351-6074 |
| OVERALL LENGTH | 0.170 INCHES NOMINAL IN |
| POWER RATING PER CHARACTERISTIC | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| INTERNAL CONFIGURATION | FIELD EFFECT OR UNIJUNCTION |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 2.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE |
| OVERALL DIAMETER | 0.350 INCHES NOMINAL IN |
| TERMINAL TYPE AND QUANTITY | 3 SOLDER STUD |
| SEMICONDUCTOR MATERIAL | SILICON |
| MOUNTING METHOD | TERMINAL |